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EE-SX1115 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1115
?SPAN class="pst EE-SX1115_2587211_6"> Dimensions
Note: All units are in millimeters unless otherwise indicated.
?SPAN class="pst EE-SX1115_2587211_6"> Features
" 14.5-mm-tall model with a deep slot.
" PCB mounting type.
" High resolution with a 0.5-mm-wide aperture.
?SPAN class="pst EE-SX1115_2587211_6"> Absolute Maximum Ratings (Ta = 25?SPAN class="pst EE-SX1115_2587211_6">C)
Note: 1.  Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2.  The  pulse  width  is  10  ?/SPAN>s  maximum  with  a  frequency  of
100 Hz.
3.  Complete soldering within 10 seconds.
?SPAN class="pst EE-SX1115_2587211_6"> Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX1115_2587211_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions Tolerance
3 mm max.    
?.3
3 < mm d 6    
?.375
6 < mm d 10    
?.45
10 < mm d 18    
?.55
18 < mm d 30    
?.65
Unless otherwise specified, the
tolerances are as shown below.
Cross section AA
0.5?SPAN class="pst EE-SX1115_2587211_13">0.05
12?SPAN class="pst EE-SX1115_2587211_13">0.4
Four, 0.5
(1.94)
Optical axis
(2.1)
4.2?SPAN class="pst EE-SX1115_2587211_13">0.1
K
A
C
E
C
B
(11.2)
Four, 0.25
2-2
5 min.
1.75?SPAN class="pst EE-SX1115_2587211_13">0.1
A
2.5
14.5
0.2
5
14
A
Four, C0.3
5
1.03
1.03
Four, R0.1
Four, R0.1
1.35
+0.06
0.01
1.35
+0.06
0.01
1.35
+0.06
0.01
1.35
+0.06
0.01
Part B
Part C
Item
Symbol    Rated value
Emitter
Forward current
I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage
V
R
4 V
Detector
CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current
I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating
Topr
25癈 to 85癈
Storage
Tstg
30癈 to
100癈
Soldering temperature
Tsol
260癈
(see note 3)
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
 = 30 mA
Reverse current
I
R
0.01 糀 typ., 10 糀 max.
V
R
 = 4 V
Peak emission wavelength
?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector
Light current
I
L
0.5 mA min., 14 mA max.
I
F
 = 20 mA, V
CE
 = 10 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
 = 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated volt-
age
V
CE
 (sat)
0.1 V typ., 0.4 V max.
I
F
 = 20 mA, I
L
 = 0.1 mA
Peak spectral sensitivity wave-
length
?/DIV>
P
850 nm typ.
V
CE
 = 10 V
Rising time
tr
4 約 typ.
V
CC
 = 5 V, R
L
 = 100 ? I
L
 = 5 mA
Falling time
tf
4 約 typ.
V
CC
 = 5 V, R
L
 = 100 ? I
L
 = 5 mA
Be sure to read Precautions on page 25.
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